Our reporter Gui Rong reported that "possessing complete independent intellectual property rights has broken the monopoly of developed countries such as Japan and the United States on semiconductor lighting technology, and its industrial prospects and strategic significance are unlimited." This is a high evaluation by domestic and foreign experts on the "silicon substrate light-emitting diode" project of Latticepower. On February 1st, the project began construction in Nanchang High tech Zone and embarked on the path of industrial development. Vice Secretary of the Provincial Party Committee and Governor Wu Xinxiong, Member of the Provincial Party Committee Standing Committee and Executive Vice Governor Ling Chengxing, Member of the Provincial Party Committee Standing Committee and Secretary of the Nanchang Municipal Party Committee Yu Xinrong, Vice Governor Hong Lihe attended the ceremony and laid the foundation for the project.

The technology of Latticepower (Jiangxi) Co., Ltd. comes from the Engineering Research Center of the Ministry of Education for Luminous Materials and Devices at Nanchang University, led by Professor Jiang Fengyi. With funding from the 863 Program, the Electronic Information Industry Development Fund, and the Science and Technology Plan of Jiangxi Province and Nanchang City, the center has overcome more than 10 technical difficulties and successfully developed the third generation semiconductor material gallium nitride based blue light-emitting diode material and chip on the first generation semiconductor material silicon substrate. It has also achieved mass production globally and is in a leading position in similar international research and development work. This product has original intellectual property rights, and its successful development has changed the monopoly of LED core technology in developed countries such as Japan and the United States, paving the way for LED development with Chinese characteristics.

Latticepower Co., Ltd. was rated as one of the "Top 50 Most Valuable Investment Enterprises in China in 2006". With the support of three international venture capital funds, Jinshajiang, Mayfield, and AsiaVest, the company has successfully achieved the industrialization of silicon substrate gallium nitride based blue light-emitting diodes. The project will be constructed in three phases, with a total investment of 70 million US dollars in the first phase. It will form an annual production capacity of 5 billion silicon substrate blue and green LED chips, and will be put into production by the end of this year; The second phase of construction aims to achieve an annual production of 10 billion blue and green LED chips on silicon substrates; The third phase aims to build an upstream, midstream, and downstream industrial chain, achieving LED industrial clusters and becoming one of the most competitive semiconductor lighting industrialization bases in the world.

John Stockton, a partner of the renowned Mayfield venture fund in Silicon Valley, said, "We are delighted to collaborate with Crystal Energy Optoelectronics. Their research and development achievements have truly world-class intellectual property rights and have a great impact on the light-emitting diode industry

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Silicon based light-emitting diode materials and devices "are a new type of light-emitting materials and devices, which use" silicon "instead of traditional" sapphire "or" silicon carbide "as the substrate to manufacture light-emitting diode materials and devices. Due to the much lower cost of devices on silicon substrates, it will be a strong competitor in the current market for "sapphire" or "silicon carbide" substrate luminescent materials and device products, with strong market competitiveness.