Recently, LatticePower released the results of the InGaN based red, green, and blue series of micro LED epitaxial technology on a 12 inch silicon substrate.

The image shows the fast inspection EL lighting effect of InGaN based LED epitaxial wafers with red, green, and blue light on a 12 inch silicon substrate

Founded in 2006, LatticePower is a full industry chain IDM semiconductor optoelectronic product provider with core chip technology, providing high-quality LED (epitaxial, chip, packaging, and module) light sources and sensing sensor products and solutions to global customers.

Based on nearly 20 years of silicon substrate GaN based LED technology and industrial accumulation, Crystal Energy Optoelectronics launched the 8-inch silicon substrate InGaN red light epitaxy technology as early as 2020, and is still continuously researching and developing to improve the InGaN red light efficiency.

In September 2021, Crystal Energy Optoelectronics successfully prepared a silicon substrate InGaN red, green, and blue micro LED array with a pixel spacing of 25 microns and a pixel density of 1000PPI. At present, the important technical indicator of pixel spacing has been reduced to 8 micrometers.

In 2022, LatticePower broke through the key technology of InGaN based tri color Micro LED epitaxy on an 8-inch silicon substrate and successfully prepared a 5-micron pitch Micro LED tri color array, actively expanding into emerging markets.

Driven by cost and yield, upgrading to large-sized wafers has become a definite development trend in the industrialization of Micro LED, which is also in line with the company's continuous innovation pursuit in the field of GaN based LED technology on silicon substrates. Large size wafers can not only significantly improve the utilization of Micro LED epitaxial wafers and CMOS backboards, but also facilitate compatibility with mature silicon IC devices and processes, improve the efficiency of Micro LED processes, reduce costs, and accelerate the commercial process of Micro LED technology.

According to Dr. Fu Yi, Vice President of LatticePower, the epitaxial growth of Micro LED on large-sized silicon substrates poses more stringent challenges to the development of key technologies such as GaN crystal quality, epitaxial warping, external quantum efficiency, optoelectronic consistency, and InGaN red MQW.

The release of the industrial epitaxial technology for InGaN based red, green, and blue micro LEDs on a 12 inch silicon substrate indicates that LatticePower has continuously innovated and iterated its silicon substrate GaN based LED technology, and has preliminarily overcome the key technical challenges mentioned above, paving the way for the optimization and improvement of subsequent technologies and processes.

Apple's launch of Vision Pro this year has brought higher popularity to the global AR/VR industry, but Vision Pro will not be the end point. People's expectations for lightweight and efficient wearable display technology are becoming increasingly urgent, which will greatly promote innovation and application of various micro display technologies.

The process route of Micro LED based on large-sized silicon substrate has great potential in cost, yield, and light efficiency, and is expected to become the mainstream industrialization route of micro level Micro LED. The breakthrough of 12 inch silicon substrate three primary color Micro LED epitaxial technology will effectively promote the development of Micro LED display technology in this direction.